Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric co ...
Table of Contents
1 Market Overview
1.1 Ferroelectric RAM Introduction
1.2 Market Analysis by Type
1.2.1 Serial Memory
1.2.2 Parallel Memory
1.3 Market Analysis by Applications
1.3.1 Smart Meters
1.3.2 Automotive Electronics
1.3.3 Medical Devices
1.3.4 Wearable Devices
1.4 Market Analysis by Regions
1.4.1 North America (United States, Canada and Mexico)
220.127.116.11 United States Market States and Outlook (2014-2024)
18.104.22.168 Canada Market States and Outlook (2014-2024)
22.214.171.124 Mexico Market States and Outlook (2014-2024)
1.4.2 Europe (Germany, France, UK, Russia and Italy)
126.96.36.199 Germany Market States and Outlook (2014-2024)
188.8.131.52 France Market States and Outlook (2014-2024)
184.108.40.206 UK Market States and Outlook (2014-2024)
220.127.116.11 Russia Market States and Outlook (2014-2024)
18.104.22.168 Italy Mark ...